| PART |
Description |
Maker |
| ZUMT591 |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.3 to 4.7; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Zetex Semiconductor PLC
|
| CRF02 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.8 to 2.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV
|
Toshiba Corporation
|
| TMP86CH47IUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 17.5 to 18.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86P820FG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.6 to 4.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP87CM53F |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| ISL9V5036S3ST |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Fairchild Semiconductor Corporation
|
| TMP86CP23AUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.8 to 2.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86FH12MG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 36.4 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86C420FG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP19A43FZXBG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 32位RISC微处理器
|
Toshiba, Corp.
|
| TC7SG32AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
2 Input OR Gate
|
Toshiba Corporation
Toshiba Semiconductor
|
| TC7SG17AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Schmitt Buffer
|
Toshiba Corporation
Toshiba Semiconductor
|
